Vacuum Tube - 12DW7 / ECC832, JJ Electronics, Dual Triode

Vacuum Tube - 12DW7 / ECC832, JJ Electronics, Dual Triode

JJ Electronics
Pictured: Regular
Pictured: Regular
Pictured: Gold
Pictured: Gold
Pictured: Regular
Pictured: Regular
Pictured: Gold
Pictured: Gold
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Pictured: RegularPictured: GoldPictured: RegularPictured: Gold
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  • Gold (T-12DW7-GOLD-JJ)
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In the 12DW7/ECC832, Section 1 of the tube (pins 6, 7, and 8) is the high gain 12AX7/ECC83 spec (gain factor 100) and Section 2 (pins 1, 2, and 3) is the low gain 12AU7/ECC82 spec (gain factor 17).

ECC832 (T-12DW7-JJ-X)
Section 1 Section 2
Pins 6, 7, 8 1, 2, 3
Gain Factor of 100 Factor of 17
Spec 12AX7/ECC83 12AU7/ECC82
ECC823 (T-ECC823-JJ)
Section 1 Section 2
Pins 6, 7, 8 1, 2, 3
Gain Factor of 17 Factor of 100
Spec 12AU7/ECC82 12AX7/ECC83
SKU:
T-12DW7-JJ-X
Item ID:
004479
Brand:
JJ Electronics
RoHS Compliant
Part Numbers
Pin TypeOur Part NumberUPC/EANJJ Electronics Part Number
GoldT-12DW7-GOLD-JJ609722123495 ECC832 - GOLD
RegularT-12DW7-JJ609722123501 ECC832 - 12DW7
Body Height49.2 mm
Cathode Current, system I (Ik)≤ 8 mA
Cathode Current, system II (Ik)≤ 20 mA
Filament Current (If)300 / 150 mA
Filament Voltage (Uf)6.3 / 12.6 V
Gain, System I (μ)100
Gain, System Ii (μ)17
Grid Resistance, system I (Rg)2.2 MΩ
Grid Resistance, system II (Rg)1 MΩ
Grid Voltage, system I (Ug)≥ -50 V, -2 V typical
Grid Voltage, system II (Ug)≥ -50 V, -8.5 V typical
Heater to cathode resistance, system I (Rk/f)150 kΩ
Heater to cathode resistance, system II (Rk/f)150 kΩ
Heater to cathode voltage, system I (Uk/f)≤ 180 V
Heater to cathode voltage, system II (Uk/f)≤ 180 V
Internal Resistance, system I (Ri)62.5 kΩ
Internal Resistance, system II (Ri)7.7 kΩ
Item Diameter22 mm
Item Height56.3 mm
Plate Current, system I (Ia)1.2 mA
Plate Current, system II (Ia)10.5 mA
Plate Dissipation, system I (Wa)≤ 1 W
Plate Dissipation, system II (Wa)≤ 2.75 W
Plate Voltage (Ua)≤ 300 V, 250 V typical
Transconductance, system I (S)1.6 mA/V
Transconductance, system II (S)2.2 mA/V
Packaging Information
Packaging DimensionsGold versionT-12DW7-GOLD-JJ1 in. × 1 in. × 2.5 in.
Regular versionT-12DW7-JJ1 in. × 1 in. × 2.4 in.
Weight (Packaging)0.0287 lbs.
T-12DW7-JJ - Regular versionBody Height49.2 mm
Cathode Current, system I (Ik)≤ 8 mA
Cathode Current, system II (Ik)≤ 20 mA
Filament Current (If)300 / 150 mA
Filament Voltage (Uf)6.3 / 12.6 V
Gain, System I (μ)100
Gain, System Ii (μ)17
Grid Resistance, system I (Rg)2.2 MΩ
Grid Resistance, system II (Rg)1 MΩ
Grid Voltage, system I (Ug)≥ -50 V, -2 V typical
Grid Voltage, system II (Ug)≥ -50 V, -8.5 V typical
Heater to cathode resistance, system I (Rk/f)150 kΩ
Heater to cathode resistance, system II (Rk/f)150 kΩ
Heater to cathode voltage, system I (Uk/f)≤ 180 V
Heater to cathode voltage, system II (Uk/f)≤ 180 V
Internal Resistance, system I (Ri)62.5 kΩ
Internal Resistance, system II (Ri)7.7 kΩ
Item Diameter22 mm
Item Height56.3 mm
Plate Current, system I (Ia)1.2 mA
Plate Current, system II (Ia)10.5 mA
Plate Dissipation, system I (Wa)≤ 1 W
Plate Dissipation, system II (Wa)≤ 2.75 W
Plate Voltage (Ua)≤ 300 V, 250 V typical
Transconductance, system I (S)1.6 mA/V
Transconductance, system II (S)2.2 mA/V
T-12DW7-GOLD-JJ - Gold versionBody Height49.2 mm
Cathode Current, system I (Ik)≤ 8 mA
Cathode Current, system II (Ik)≤ 20 mA
Filament Current (If)300 / 150 mA
Filament Voltage (Uf)6.3 / 12.6 V
Gain, System I (μ)100
Gain, System Ii (μ)17
Grid Resistance, system I (Rg)2.2 MΩ
Grid Resistance, system II (Rg)1 MΩ
Grid Voltage, system I (Ug)≥ -50 V, -2 V typical
Grid Voltage, system II (Ug)≥ -50 V, -8.5 V typical
Heater to cathode resistance, system I (Rk/f)150 kΩ
Heater to cathode resistance, system II (Rk/f)150 kΩ
Heater to cathode voltage, system I (Uk/f)≤ 180 V
Heater to cathode voltage, system II (Uk/f)≤ 180 V
Internal Resistance, system I (Ri)62.5 kΩ
Internal Resistance, system II (Ri)7.7 kΩ
Item Diameter22 mm
Item Height56.3 mm
Plate Current, system I (Ia)1.2 mA
Plate Current, system II (Ia)10.5 mA
Plate Dissipation, system I (Wa)≤ 1 W
Plate Dissipation, system II (Wa)≤ 2.75 W
Plate Voltage (Ua)≤ 300 V, 250 V typical
Transconductance, system I (S)1.6 mA/V
Transconductance, system II (S)2.2 mA/V

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