Transistors

Alternistors are specifically designed for applications which are required to switch highly inductive loads. To accomplish this, a special chip has been designed which effectively offers the same performance as two thyristors (SCRs) wired inverse parallel (back to back); hence the alternistor has better turn-off behavior than a standard triac.

Transistor MJ15015, TO-3 Case, NPN
PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating areas.
Safe Operating Area - Rated to 60V

Transistor MJ15025, TO-3 Case The MJ15025 is a power transistor designed for high-power audio, disk head positioners, and other linear applications Features:

• High Safe Operating Area: -2A @ 80 V
• High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc

Transistor MJ15023, TO-3 Case, PNP
PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.
Features

• High Safe Operating Area (100% Tested) −2 A @ 80 V
• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

Transistor MJ15022, TO-3 Case, NPN PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features

• High Safe Operating Area (100% Tested) −2 A @ 80 V
• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

The AS3046 is Alfa’s version of the CA3046 (LM3046) IC. The AS3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power systems. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The AS3046 is available in a 14-pin DIP package. Features

• Matched pair of npn transistors
• VBE matched less than ±1 mV
• 5 general purpose monolithic transistors
• Wide operating current range

Applications

• Filters
• Custom designed differential amplifiers
• Temperature compensated amplifiers

The AS395 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz typ @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the AS395 an excellent choice for demanding preamplifier applications.Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the AS395 an excellent choice for current mirrors. A low value of bulk resistance makes the AS395 an ideal component for applications requiring accurate logarithmic conformance. To ensure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential.

J201 N-Channel JFET in a TO-92 package. The J201 is designed primarily for low level audio and general purpose applications with high impedance signal sources.

• Max drain to gate voltage = 40 V
• Max gate to source voltage = -40 V
• Max forward gate current = 50 mA

J201 N-Channel JFET in a TO-92 package made by Siliconix. The J201 is designed primarily for low level audio and general purpose applications with high impedance signal sources.

• Max drain to gate voltage = 40 V
• Max gate to source voltage = -40 V
• Max forward gate current = 50 mA

The AS194H is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

The AS194DE is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

The AS394CH is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

The AS3046 is Alfa’s version of the CA3046 IC in an SOIC package. The AS3046D consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power systems. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The AS3046D is available in a 14-pin SOIC package. Features

• Matched pair of npn transistors
• VBE matched less than ±1 mV
• 5 general purpose monolithic transistors
• Wide operating current range

Applications

• Filters
• Custom designed differential amplifiers
• Temperature compensated amplifiers

The AS394H is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

15 A, 60 V, 115 W
EPIBASE - Designed for power amplifier and switching regulator applications. The best choice where high frequency response, low switching losses and good safe operating area are required.

• Current Gain - Bandwidth Product - fT = 2.5 MHz (Min) @ Ic = 1.0 Adc
• Safe Operating Area - Full Power Rating to 40 V

A1837 Transistor - Fender. Power amplifier applications and Driver Stage Amplifier Applications.

2SC828 NPN silicon transistors made by Panasonic. The 2SC828 is a popular NPN choice for fuzz pedals and can be found in vintage effects such as Super-Fuzz and Uni-Vibe pedals.

The BC209C is a silicon NPN transistor in a TO-106 case. The BC209C is primarily intended for general purpose audio applications. BC209C transistors were used in original silicon Fuzz Face® pedals as well as a variety of D*A*M pedals.

2N2646 programmable unijunction transistor often referred to as a PUT. The 2N2646 can be found in many tremolo effects pedal projects and vintage classics such as the Vox Repeat Percussion.

Peavey's direct replacement for the SJE 5331. The MJE243G NPN transistor is rated 120V, 3A, and comes in a Case-77 package.

BC108C NPN silicon transistors made by Philips. The BC108C is a popular NPN choice for fuzz pedals and other effects such as vintage silicon Fuzz Face builds and Big Muff clones.

New old stock 2N3565 transistors manufactured by Micro Electronics. The 2N3565 is a silicon NPN transistor in a TO-106 case. The 2N3565 is primarily intended for general purpose and low level applications. 2N3565 transistors were used in the original Harmonic Percolator, Foxx Tone Machine and the Sam Ash Fuzzz Boxx.

Peavey's direct replacement for the SJE 5332. The MJE253G PNP transistor is rated 120V, 3A, and comes in a Case-77 package.

The 2N3566 is a silicon NPN transistor in a TO-105 case. The 2N3566 is primarily intended for general purpose amplifier applications.