Transistors

15 A, 60 V, 115 W
EPIBASE - Designed for power amplifier and switching regulator applications. The best choice where high frequency response, low switching losses and good safe operating area are required.

• Current Gain - Bandwidth Product - fT = 2.5 MHz (Min) @ Ic = 1.0 Adc
• Safe Operating Area - Full Power Rating to 40 V

The BC546 is a silicon general purpose NPN transistor in a TO-92 package. The BC546’s typical applications include signal processing, amplification, and switching. The BC546 is available in two different gain ranges: BC546B and BC546C. Type hFE (IC=2mA, VCE=5V) BC546B 200-450 BC546C 420-800

Transistor MJ15023, TO-3 Case, PNP
PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.
Features

• High Safe Operating Area (100% Tested) −2 A @ 80 V
• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

The BD139 is a NPN medium power BJT transistor in a TO-126 package. The BD139's typical applications include audio amplifiers and drivers but is also popularly used in silicon fuzz pedals. The BD139 is available in two different gain ranges: BD139-10 and QBD139-16. Type hFE (IC=150mA, VCE=2V) BD139-10 63-160 BD139-16 100-250

High voltage medium-power ZTX457 transistor.
Features:

• 300 Volt Collector-Emitter Voltage
• 300 Volt Collector-Base Voltage
• 0.5 Amp continuous current
• 1 Watt Maximum Power Dissipation
  

The 2N1711 is a silicon planar epitaxial NPN transistor in a TO-39 metal case. It is intended for use in high performance amplifiers, oscillators and switching circuits. The 2N1711 is a great choice for amplifiers where low noise is an important factor.

The BC558 is a silicon general purpose PNP transistor in a TO-92 package. The BC558’s typical applications include signal processing, amplification, and switching.

Transistor MJ15016, TO-3 Case, PNP
PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating areas.
Safe Operating Area - Rated to 60V

2N5400 (761), PNP general purpose amp, 120V, 10mA, TO-92 case.

Single position machine pin sockets. These pressfit sockets are mounted by inserting into a PCB hole and applying some force. They stay firmly in place with tension and can then be easily soldered to the circuit board. These sockets can fit any pin spacing, such as the non-standard 0.15” spacing of the vintage-style stripboard (vs. 0.10” on standard stripboard). They can also jump rows so that they are not all in a line. The press-fit machine pin sockets are also very low profile and have a very minimal impact on the resulting look of the build. For pins sizes .015 -.025". The recommended mounting hole diameter is 0.57".

The 2N708 is a silicon NPN transistor in a TO-18 metal case type. The 2N708 is primarily intended for use in high speed switching and VHF amplification applications.

The TIP47 power transistor is intended for use in linear and switching applications. This series is designed for line operated audio output amplifiers, switchmode power supply drivers and other switching applications.

Transistor MJ15022, TO-3 Case, NPN PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features

• High Safe Operating Area (100% Tested) −2 A @ 80 V
• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

2N1303 PNP germanium transistors. The 2N1303 is a popular PNP for fuzz pedals and other effects. This transistor is in a TO-5 package with long leads commonly found on germanium transistors.

New old stock 2N404A PNP germanium transistors manufactured by Texas Instruments. These TI 2N404A feature gold plated leads. The 2N404A is used in many fuzz pedals along with other effects. The 2N404A is the same as the 2N404 but with a higher voltage rating. This transistor is in a TO-5 package with long leads commonly found on germanium transistors.

The AS395 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz typ @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the AS395 an excellent choice for demanding preamplifier applications.Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the AS395 an excellent choice for current mirrors. A low value of bulk resistance makes the AS395 an ideal component for applications requiring accurate logarithmic conformance. To ensure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential.

MPSA63 PNP Darlington transistor (TO-92 package) - designed for high gain, low noise general purpose amplifier applications.

• Max collector to emitter voltage = -30V
• Max collector to base voltage = -30 V
• Max emitter to base voltage = -10 V
• Max collector current = -0.5 A (continuous)

Transistor MJ15015, TO-3 Case, NPN
PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating areas.
Safe Operating Area - Rated to 60V

The AS394H is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

A1837 Transistor - Fender. Power amplifier applications and Driver Stage Amplifier Applications.

The AS394CH is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

2N321 PNP germanium transistors. The 2N321 is a popular PNP for fuzz pedals and other effects. This transistor is in a TO-5 package with long leads commonly found on germanium transistors.

SDS 7204 transistor, 300 V, 10 mA, Case-30.

The AS194DE is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.