Transistors

The AS3046 is Alfa’s version of the CA3046 (LM3046) IC. The AS3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power systems. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The AS3046 is available in a 14-pin DIP package. Features

• Matched pair of npn transistors
• VBE matched less than ±1 mV
• 5 general purpose monolithic transistors
• Wide operating current range

Applications

• Filters
• Custom designed differential amplifiers
• Temperature compensated amplifiers

The AS194H is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

The AS3046 is Alfa’s version of the CA3046 IC in an SOIC package. The AS3046D consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power systems. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The AS3046D is available in a 14-pin SOIC package. Features

• Matched pair of npn transistors
• VBE matched less than ±1 mV
• 5 general purpose monolithic transistors
• Wide operating current range

Applications

• Filters
• Custom designed differential amplifiers
• Temperature compensated amplifiers

The AS394H is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

The AS394CH is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.

The AS194DE is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.