Transistor - MPSA13, Darlington 500mA 30V NPN

Transistor - MPSA13, Darlington 500mA 30V NPN

Transistor - MPSA13, Darlington 500mA 30V NPN image 1
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NPN Darlington transistor (TO-92 package) - designed for applications requiring extremely high current gain at collector currents to 1.0A.

  • Max collector to emitter voltage = 30 V
  • Max collector to base voltage = 30 V
  • Max emitter to base voltage = 10 V
  • Max collector current = 1.2 A (continuous)

Pinout:

Pinout
Product Measurements by Type
Base-emitter On Voltage (VBE(on))2.0 V
Collector-emitter Breakdown Voltage (V(BR)CES)30 V
Collector-emitter Saturation Voltage (VCE(sat))1.5 V
Collector Current (IC)500 mA
Collector Cut-off Current (ICBO)100 nA
Collector−base Voltage (VCBO)30 V
Collector−emitter Voltage (VCES)30 V
Current Gain - Bandwidth Product (fT)125 MHz
D.C. Current Gain (hFE)5,000
Emitter-base Voltage (VEBO)10 V
Emitter Cut-off Current (IEBO)100 nA
Operating And Storage Temperature (TJ, TSTG)-55°C to 150°C
Thermal Resistance, junction to ambient (RθJA)200°C/mW
Thermal Resistance, junction to case (RθJC)83.3°C/mW
Total Device Dissipation @ TA = 25°C (PD)625 mW
Packaging Information
Packaging Dimensions0.75 in. × 0.174 in. × 0.135 in.
Weight (Packaging)0.001 lbs.
PDF: Specification SheetAll Models
PNG: PinoutAll Models

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Specifications, Files, and Documents

PNG: Pinout Pinout5.24 KB
PDF: Specification Sheet Specification Sheet73.76 KB