Transistor - AS3046D, Array of 5, Matched Pair, SOIC-14, NPN

Transistor - AS3046D, Array of 5, Matched Pair, SOIC-14, NPN

Alfa
Transistor - AS3046D, Array of 5, Matched Pair, SOIC-14, NPN image 1
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The AS3046 is Alfa’s version of the CA3046 IC in an SOIC package. The AS3046D consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power systems. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.

The AS3046D is available in a 14-pin SOIC package.

Features

  • Matched pair of npn transistors
  • VBE matched less than ±1 mV
  • 5 general purpose monolithic transistors
  • Wide operating current range

Applications

  • Filters
  • Custom designed differential amplifiers
  • Temperature compensated amplifiers
SKU:
P-Q-AS3046D
Item ID:
045570
UPC/EAN:
841358118852
ALFA RPAR Part Number:
AS3046D
Brand:
Alfa
Product Measurements by Type
Max. Base to Emitter Voltage (IE = 1mA)0.75 V
Max. Base to Emitter Voltage (IE = 10mA)0.8 V
Max. Collector-Base Voltage, UCBO50 V
Max. Collector-Current, IC30 mA
Max. Collector-Emitter Voltage, UCEO30 V
Max. Collector-Substrate Voltage, UCIO50 V
Max. Collector Cutoff Current (VCE = 10V, IB = 0)20 nA
Max. Emitter-Base Voltage, UEBO5 V
Max. Power Dissipation for Total Package500 mW
Max. Power Dissipation per Transistor200 mW
Min. Collector to Base Breakdown Voltage50 V
Min. Collector to Emitter Breakdown Voltage30V
Min. Collector to Substrate Breakdown Voltage50 V
Min. Input Offset Current for Matched Pair Q1 and Q20.02 uA
Min. Static Forward Current Transfer Ratio (VCB=0V, IC=1 mA)150
Min. Static Forward Current Transfer Ratio (VCE=3V, IC=10mA)150
Min. Static Forward Current Transfer Ratio (VCE=3V, IC=10μA)140
Typ. Collector Cutoff Current (VCB = 10V, IE = 0)0.002 nA
Typ. Collector to Emitter Saturation Voltage0.1 V
Typ. Emitter to Base Breakdown Voltage6.5 V
Typ. Magnitude of Input Offset Voltage for Differential Pair0.5 mV
Typ. Magnitude of Input Offset Voltage for Isolated Transistors0.5 mV
Packaging Information
Packaging Dimensions0.351 in. × 0.257 in. × 0.06 in.
Weight (Packaging)0.001 lbs.
PDF: DatasheetAll Models

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PDF: Datasheet Datasheet671.3 KB