Transistor - AS194DE, Matched Pair, Alfa, SOIC-8, NPN

Transistor - AS194DE, Matched Pair, Alfa, SOIC-8, NPN

Alfa
Transistor - AS194DE, Matched Pair, Alfa, SOIC-8, NPN image 1
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The AS194DE is a junction isolated ultra well-matched monolithic NPN transistor pair with an
order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range.

To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices. The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices.

The AS194DE is available in an 8-pin SOIC package.

Features

  • "Ideal" and identical transistors
  • Common-mode rejection ratio > 120dB
  • Emitter-base offset voltage < 100µV
  • Emitter-base offset voltage temperature drift 0.1µV/°C
  • Current gain (hFE) matched < 2%
  • Parameters are guaranteed in the range of collector current of 10µА tо 1mА
  • Noise Voltage Density of 1.8 nV /Hz
  • Ideal logarithmic properties
SKU:
P-Q-AS194DE
Item ID:
045567
UPC/EAN:
841358118821
ALFA RPAR Part Number:
AS194DE
Brand:
Alfa
Product Measurements by Type
Max. Base-Emitter Current10mА
Max. Collector-Base Voltage40V
Max. Collector- Collector Leakage2 nA
Max. Collector-Collector Voltage40V
Max. Collector-Emitter Voltage40V
Max. Collector-Substrate Voltage40V
Max. Collector Current20mА
Max. Emitter-Base Offset Voltage100 µV
Min. Input Voltage Noise1.8 nV /Hz
Typ. Change in Emitter-Base Offset Voltage vs Collector-Base Voltage10 µV
Typ. Change in Emitter-Base Offset Voltage vs Collector Current5 µV
Typ. Collector-Base Leakage0.05 nA
Typ. Collector to Emitter Saturation Voltage (IC=1 mА, IВ=10 µА)0.2 V
Typ. Collector to Emitter Saturation Voltage (IC=1 mА, IВ=100 µА)0.1 V
Typ. Current Gain (IC=1 mА)700
Typ. Current Gain (IC=1 µА)300
Typ. Current Gain (IC=10 µА)450
Typ. Current Gain (IC=100 µА)550
Typ. Current Gain Match0.5%
Packaging Information
Packaging Dimensions0.255 in. × 0.197 in. × 0.06 in.
Weight (Packaging)0.001 lbs.
PDF: DatasheetAll Models

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PDF: Datasheet Datasheet360.78 KB