Transistor - 2N5088, Bipolar, General Purpose
2N5088 NPN Bipolar Junction Transistor in TO-92 package
Pinout:
SKU:
P-Q2N5088
Item ID:
040138
Element:
Matched Pair:
Package:
Polarity:
Series:
Type:
RoHS Compliant
| Base-emitter On Voltage (VBE(on)) | 0.8 V | ||
| Collector-base Voltage (VCBO) | 35 V | ||
| Collector-base breakdown voltage (V(BR)CBO) | 35 V | ||
| Collector-base capacitance (Ccb) | 4.0 pF | ||
| Collector-emitter Saturation Voltage (VCE(sat)) | 0.5 V | ||
| Collector-emitter Voltage (VCEO) | 30 V | ||
| Collector-emitter breakdown voltage (V(BR)CEO) | 30 V | ||
| Collector Current (IC) | 100 mA | ||
| Collector Cut-off Current (ICBO) | 50 nA | ||
| Current Gain - Bandwidth Product (fT) | 50 MHz | ||
| D.C. Current Gain (hFE) | 300 - 900 | ||
| Depth | 0.14 in. | ||
| Emitter-base Capacitance (Ceb) | 10 pF | ||
| Emitter-base Voltage (VEBO) | 4.5 V | ||
| Emitter Cut-off Current (IEBO) | 50 nA | ||
| Item Height | 0.18 in. | ||
| Item Width | 0.19 in. | ||
| Noise Figure (nf) | 3.0 dB | ||
| Operating And Storage Temperature (TJ, TSTG) | -55°C to 150°C | ||
| Small-signal Current Gain (hfe) | 350 - 1400 | ||
| Thermal Resistance, junction to ambient (RθJA) | 200°C/W | ||
| Thermal Resistance, junction to case (RθJC) | 83.3°C/W | ||
| Total Device Dissipation (PD) | 625 mW | ||
| Packaging Dimensions | 0.302 in. × 0.302 in. × 0.138 in. | ||
| Weight (Packaging) | 0.0003 lbs. | ||
 Specification Sheet | All Models |
 Pinout | All Models |
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