Transistor - 2N2907, Silicon, TO-18 case, PNP

Name: Transistor - 2N2907, Silicon, TO-18 case, PNP
SKU: P-Q2N2907
Availability: InStock

Transistor - 2N2907, Silicon, TO-18 case, PNP image 1

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The 2N2907 is a silicon planar epitaxial PNP transistor in a TO-18 metal case type. The 2N2907 is designed for use in high speed saturated switching and general purpose applications.

Pinout:

SKU:

P-Q2N2907

Item ID:

046112

Element:

Silicon

Matched Pair:

Package:

Polarity:

Series:

Type:

Accessory Items:

Base Emitter Saturation Voltage VBE(Sat) IC=150mA,IB=15mA			1.3 V
Base Emitter Saturation Voltage VBE(Sat) IC=500mA,IB=50mA			2.6 V
Collector Base Voltage VCBO IC=10uA.IE=0			60 V
Collector Emitter Voltage VCEO* IC=10mA,IB=0			60 V
DC Current Gain (hFE) IC=0.1mA,VCE=10V			>75
DC Current Gain (hFE) IC=1mA,VCE=10V			>100
DC Current Gain (hFE) IC=10mA,VCE=10V			>100
DC Current Gain (hFE) IC=150mA,VCE=10V			100-300
DC Current Gain (hFE)IC=500mA,VCE=10V			>50
Emitter Base Voltage VEBO IE=10uA, IC=0			5.0 V
Max. Base Current IB VCE=30V, VBE=0.5V			50 nA
Max. Collector -Base Voltage			60 V
Max. Collector -Emitter Voltage			60 V
Max. Collector Current Continuous			600 mA
Max. Collector Cutoff Current ICBO VCB=50V, IE=0			10 nA
Max. Collector Emitter Saturation Voltage VCE(Sat) IC=150mA,IB=15mA			0.4 V
Max. Collector Emitter Saturation Voltage VCE(Sat) IC=500mA,IB=50mA			1.6 V
Max. Emitter -Base Voltage			5.0 V
Max. Power Dissipation @Ta=25 degC			400 mW