Transistor - 2N2907, Silicon, TO-18 case, PNP
The 2N2907 is a silicon planar epitaxial PNP transistor in a TO-18 metal case type. The 2N2907 is designed for use in high speed saturated switching and general purpose applications.
Pinout:
SKU:
P-Q2N2907
Item ID:
046112
Element:
Matched Pair:
Package:
Polarity:
Series:
Type:
Base Emitter Saturation Voltage VBE(Sat) IC=150mA,IB=15mA | 1.3 V | ||
Base Emitter Saturation Voltage VBE(Sat) IC=500mA,IB=50mA | 2.6 V | ||
Collector Base Voltage VCBO IC=10uA.IE=0 | 60 V | ||
Collector Emitter Voltage VCEO* IC=10mA,IB=0 | 60 V | ||
DC Current Gain (hFE) IC=0.1mA,VCE=10V | >75 | ||
DC Current Gain (hFE) IC=1mA,VCE=10V | >100 | ||
DC Current Gain (hFE) IC=10mA,VCE=10V | >100 | ||
DC Current Gain (hFE) IC=150mA,VCE=10V | 100-300 | ||
DC Current Gain (hFE)IC=500mA,VCE=10V | >50 | ||
Emitter Base Voltage VEBO IE=10uA, IC=0 | 5.0 V | ||
Max. Base Current IB VCE=30V, VBE=0.5V | 50 nA | ||
Max. Collector -Base Voltage | 60 V | ||
Max. Collector -Emitter Voltage | 60 V | ||
Max. Collector Current Continuous | 600 mA | ||
Max. Collector Cutoff Current ICBO VCB=50V, IE=0 | 10 nA | ||
Max. Collector Emitter Saturation Voltage VCE(Sat) IC=150mA,IB=15mA | 0.4 V | ||
Max. Collector Emitter Saturation Voltage VCE(Sat) IC=500mA,IB=50mA | 1.6 V | ||
Max. Emitter -Base Voltage | 5.0 V | ||
Max. Power Dissipation @Ta=25 degC | 400 mW |
Packaging Dimensions | 0.739 in. × 0.252 in. × 0.252 in. | ||
Weight (Packaging) | 0.0022 lbs. |
Pinout | All Models |
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