Transistor - 2N2484, Silicon, TO-18 case, NPN
The 2N2484 is a silicon planar epitaxial NPN transistor in a TO-18 metal case type. The 2N2484 is primarily intended for use in high performance, low level, low noise amplifier applications.
Pinout (bottom view):
SKU:
P-Q2N2484
Item ID:
046111
Element:
Matched Pair:
Package:
Polarity:
Series:
Type:
Max. Base Emitter on Voltage VBE(on) IC=0.1mA, VCE=5V | 0.7 V | ||
Max. Collector Base Voltage | 60 V | ||
Max. Collector Current Continuous | 50 mA | ||
Max. Collector Cutoff Current ICBO VCB=45V, IE=0 | 10 nA | ||
Max. Collector Emitter Saturation Voltage VCE(Sat) IC=1mA,IB=0.1mA | 0.35 V | ||
Max. Collector Emitter Voltage | 60 V | ||
Max. DC Current Gain (hFE) IC=10mA,VCE=5V | 800 | ||
Max. DC Current Gain (hFE) IC=10uA, VCE=5V | 500 | ||
Max. Emitter Base Voltage | 6.0 V | ||
Max. Emitter Cutoff Current IEBO VEB=5V, IC=0 | 10 nA | ||
Max. Operating And Storage Junction Temperature Range Tj, Tstg | -65 to +200 deg C | ||
Max. Power Dissipation @Ta=25 degC | 360 mW | ||
Max. Power Dissipation @Tc=25 degC | 1.20 W | ||
Min. Base Emitter on Voltage VBE(on) IC=0.1mA, VCE=5V | 0.5 V | ||
Min. Collector Base Voltage VCBO IC=10uA.IE=0 | 60 V | ||
Min. Collector Emitter Voltage VCEO** IC=10mA,IB=0 | 60 V | ||
Min. DC Current Gain (hFE) IC=1mA, VCE=5V | 250 | ||
Min. DC Current Gain (hFE) IC=1uA, VCE=5V | 30 | ||
Min. DC Current Gain (hFE) IC=10uA, VCE=5V | 20 | ||
Min. DC Current Gain (hFE) IC=100uA, VCE=5V | 175 | ||
Min. DC Current Gain (hFE) IC=500uA, VCE=5V | 200 | ||
Min. Emitter Base Voltage VEBO IE=10uA, IC=-0 | 6.0 V | ||
Small Signal Current Gain (hfe) IC=1mA, VCE=5V | 150-900 |
Packaging Dimensions | 0.739 in. × 0.252 in. × 0.252 in. | ||
Weight (Packaging) | 0.0029 lbs. |
Pinout (bottom view) | All Models |
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