Transistor - 2N1711, Silicon, TO-39 case, NPN
The 2N1711 is a silicon planar epitaxial NPN transistor in a TO-39 metal case. It is intended for use in high performance amplifiers, oscillators and switching circuits. The 2N1711 is a great choice for amplifiers where low noise is an important factor.
Pinout:
SKU:
P-Q2N1711
Item ID:
046110
Element:
Matched Pair:
Package:
Polarity:
Series:
Type:
| Max. Base Emitter Saturation Voltage | 1.3 V | |
| Max. Collector Base Voltage | 75 V | |
| Max. Collector Emitter Saturation Voltage | 0.5 V | |
| Max. Collector Emitter Voltage, RBE < 10Ω | 50 V | |
| Max. DC Current Gain (hFE) IC=150mA, VCE=10V | 300 | |
| Max. Emitter Base Voltage | 7 V | |
| Max. Emitter Cutoff Current | 5 nA | |
| Max. Input Capacitance | 80 pF | |
| Max. Operating and Storage Junction Temperature Range | -65 to +200 ºC | |
| Max. Output Capacitance | 25 pF | |
| Max. Power Dissipation at Ta=25ºC | 800 mW | |
| Max. Power Dissipation at Tc=25ºC | 3 W | |
| Min. DC Current Gain (hFE) C=500mA, VCE=10V | 40 | |
| Min. DC Current Gain (hFE) IC=0.01mA, VCE=10V | 20 | |
| Min. DC Current Gain (hFE) IC=0.1mA, VCE=10V | 35 | |
| Min. DC Current Gain (hFE) IC=10mA, VCE=10V | 75 | |
| Min. DC Current Gain (hFE) IC=10mA, VCE=10V, Ta= -55ºC | 35 | |
| Min. DC Current Gain (hFE) IC=150mA, VCE=10V | 100 | |
| Min. Transition Frequency | 70 MHz | |
| Noise Figure | 8dB | |
| Small Signal Current Gain (hfe) IC=1mA, VCB=5V, f=1KHz | 50-200 | |
| Small Signal Current Gain (hfe) IC=5mA, VCB=10V, f=1KHz | 70-300 |
| Packaging Dimensions | 0.785 in. × 0.396 in. × 0.396 in. | |
| Weight (Packaging) | 0.0037 lbs. |
 Pinout | All Models |
