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Semiconductors

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P-Q1N400XDiode - General purpose rectifier, 1A, 1N4005, 1N4006, 1N4007

A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.


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P-Q1N5817Diode - 1N5817, Schottky, High Switching Speed

Schottky diode with low forward voltage drop and high switching speeds.

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P-QBC550Transistor - BC550, TO-92, NPN

Low noise transistor for audio frequency amplifier applications.

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P-Q1N474XDiode - Zener, 1W, 1N4741A, 1N4748A

A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.


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P-Q2N5088Transistor - 2N5088, Bipolar, General Purpose

2N5088 NPN Bipolar Junction Transistor in TO-92 package


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P-Q2N3904Transistor - 2N3904, TO-92, NPN

General purpose low-power NPN bipolar junction transistor, used frequently in hobbyist electronic projects.

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P-QLM324Op-Amp - LM324, Quad, Low-Power, 14-Pin DIP

Quad low-power opamps in an 14-pin DIP package. The LM324 offers a 1MHz bandwidth and can be powered from a single supply.


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P-Q1N4937Diode - Fast Recovery, 1A, 600V, 1N4937

A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.


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P-QTL082Op-Amp - TL082, Dual, Wide-Bandwidth, JFET Input, 8-Pin DIP

Dual wide-bandwidth TL082 opamps in an 8-pin DIP package. The TL082 offers a high input impedance and 4MHz bandwidth.


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P-Q1N5408Diode - standard recovery rectifier, 3A, 1000V, 1N5408

1N5408 Diode. Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:



  • High Current to Small Size
  • High Surge Current Capability
  • Low Forward Voltage Drop

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