Integrated Circuits

Transistor - AS395H, Matched Pair, Alfa, TO5-8 case, PNP
The AS395 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz typ @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the AS395 an excellent choice for demanding preamplifier applications.Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the AS395 an excellent choice for current mirrors. A low value of bulk resistance makes the AS395 an ideal component for applications requiring accurate logarithmic conformance. To ensure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential.
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Transistor - AS194H, Matched Pair, Alfa, TO5-8 case, NPN
The AS194H is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.
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Transistor - AS394CH, Matched Pair, Alfa, TO5-8 case, NPN
The AS394CH is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.
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Op-Amp - AS301AH, Alfa, Single, TO5-8 case
The AS301AH is Alfa’s version of the LM301A in an 8 pin TO5 package. The AS301A is a general purpose operational amplifier. This amplifier offers many features which make its application nearly foolproof: overload protection on the input and output, no latch-up when the common mode range is exceeded, and freedom from oscillations and compensation with a single 30 pF capacitor. It has advantages over internally compensated amplifiers in that the frequency compensation can be tailored to the particular application. For example, in low frequency circuits it can be overcompensated for increased stability margin. Or the compensation can be optimized to give more than a factor of ten improvements in high frequency performance for most applications. In addition, the device provides better accuracy and lower noise in high impedance circuitry.
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Transistor - AS394H, Matched Pair, Alfa, TO5-8 case, NPN
The AS394H is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices.
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