Transistor - Mosfet BS170, Small Signal
MOSFET BS170 N-Channel Transistor. Used in MOD® Kits.
Note - this is a fragile component! Use caution not to overheat or break leads.
Pinout:
SKU:
P-QBS170
Item ID:
003218
UPC/EAN:
609722129909
Element:
Matched Pair:
Package:
Polarity:
Series:
Type:
RoHS Compliant
Drain-gate Voltage (VDGR) | 60 V | ||
Drain-source Breakdown Voltage (BVDSS) | ≥ 60 V | ||
Drain-source Voltage (VDSS) | 60 V | ||
Drain Current, continuous (ID) | 500 mA | ||
Drain current - pulsed (ID) | 1.2 A | ||
Forward Transconductance (gFS) | 320 mS | ||
Gate-body Leakage, Forward (IGSSF) | ≤ 10 nA | ||
Gate-source Voltage (VGSS) | ± 20 V | ||
Gate Threshold Voltage (VGS(th)) | 0.8 V - 3 V, 2.1 V typical | ||
Input Capacitance (Ciss) | ≤ 40 pF, 24 pF typical | ||
Lead Temperature for Soldering, maximum (TL) | 300°C | ||
Operating And Storage Temperature (TJ, TSTG) | -55°C to 150°C | ||
Output Capacitance (Coss) | 17 pF typical, ≤ 30 pF | ||
Power Dissipation, maximum (PD) | 830 mW | ||
Reverse Transfer Capacitance (Crss) | ≤ 10 pF, 7 pF typical | ||
Static Drain-source On-resistance (RDS(ON)) | ≤ 5 Ω, 1.2 Ω typical | ||
Thermal Resistance, junction to ambient (RθJA) | 150°C/W | ||
Turn-off Time (toff) | 10 ns | ||
Turn-on Time (ton) | 10 ns | ||
Zero Gate Voltage Drain Current (IDSS) | ≤ 0.5 μA |
Packaging Dimensions | 0.8 in. × 0.3 in. × 0.3 in. | ||
Weight (Packaging) | 0.0005 lbs. |
Specification Sheet | All Models |
Pinout | All Models |
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